Magnetoresistiver Speicher Hoher Dichte mit Wahlfreiem Zugriff und Verfahren zu Seiner Herstellung

Details

Veröffentlichungs-Nr.

EP4776783

Anmeldetag

6. Januar 2026

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

Abstract

A three-dimensional (3D) magnetoresistive random access memory (MRAM) device includes a plurality of stacked cells (106, 106-1, 106-2, ...), a plurality of stacked insulating layers (120), and a first interconnect structure (116) of a first type. The plurality of cells (106, 106-1, 106-2, ...) are stacked in a direction perpendicular to a major surface of a substrate (504) of the 3D MRAM device. Each cell of the first plurality of cells (106, 106-1, 106-2, ...) is separated by an insulating layer of the plurality of insulating layers (120) from another cell of the plurality of cells. Each cell of the first plurality of cells (106, 106-1, 106-2, ...) includes a magnetic tunnel junction (MTJ) structure (108) and a second interconnect structure (130) of a second type configured to interface with the MTJ structure (108) of the cell. The first interconnect structure (116) is oriented orthogonally to the second interconnect (130) of each cell of the plurality of cells, and extends through the plurality of cells (106, 106-1, 106-2, ...) to interface with the MTJ structure (108) in each cell.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande