Quantenvorrichtung, Verfahren zur Herstellung einer Quantenvorrichtung und Verfahren zur Inspektion der Quantenvorrichtung

Details

Veröffentlichungs-Nr.

EP4776823

Anmeldetag

6. September 2023

Veröffentlichung

13. März 2025

Rechtsraum

EP

IPC

H10N60/12

Abstract

A quantum device includes a first Josephson junction element formed on a substrate; a second Josephson junction element; and a first temperature sensing structure, the second Josephson junction element and the first temperature sensing structure being formed in a first region of the substrate, wherein the first Josephson junction element includes a first superconducting film; a second superconducting film; and a first oxide film provided between the first superconducting film and the second superconducting film, the second Josephson junction element includes a third superconducting film; a fourth superconducting film; and a second oxide film provided between the third superconducting film and the fourth superconducting film, and wherein the first temperature sensing structure is irreversibly deformed at a first temperature that is lower than a temperature at which a superconducting characteristic of the third superconducting film or the fourth superconducting film changes. The quantum device can be used for quantum computing, for example.

Anmelder

Firma

FUJITSU LIMITED

Land

🇯🇵 Japan

Fachgebiete