Integrierte Schaltungen mit Wärmeverwaltungsschichten für Verbesserte Wärmeableitung

Details

Veröffentlichungs-Nr.

EP4776834

Anmeldetag

25. November 2025

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

Abstract

Techniques are provided herein to form semiconductor dies with a thermally conductive bond interface to enhance the thermal dissipation from the semiconductor devices. A frontside interconnect region is provided above a semiconductor device layer to, for example, route signals between various semiconductor devices in the device layer. A thermally conductive bond layer may be provided above the frontside interconnect region, such as on a top-most layer of the frontside interconnect region. The thermally conductive bond layer includes a metal such as titanium, ruthenium, copper, or generally any material having a thermal conductivity of at least 1.5 W/m·K. The bond layer may be formed on a material layer that is deposited first on the frontside interconnect region. The material layer may be any of diamond, silicon carbide, copper, or aluminum nitride, to name a few examples.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA