Systeme und Verfahren zur Hochsteifen Substratintegration in Halbleitergehäusen

Details

Veröffentlichungs-Nr.

EP4776839

Anmeldetag

8. Januar 2026

Veröffentlichung

15. Juli 2026

Rechtsraum

EP

Abstract

The subject technology is directed to semiconductor devices and fabrication methods thereof. In an embodiment, the subject technology provides an apparatus that includes a substrate comprising a first metal material and a first layer coupled to the substrate. The apparatus further includes a second layer coupled to the substrate via the first layer. The second layer comprises an organic material. The first layer includes a third layer comprising a first adhesion material configured to couple to the organic material, a fourth layer comprising a second adhesion material, and a fifth layer comprising a third adhesion material configured to couple to the first metal material. The multi-layer adhesion system enables reliable bonding between organic and metallic components, ensuring robust mechanical and electrical performance of the system. There are other embodiments as well.

Anmelder

Firma

Avago Technologies International Sales Pte. Limited

Land

🇸🇬 Singapur