Laminat, Halbleiterbauelement damit und Verfahren zur Herstellung des Laminats

Details

Veröffentlichungs-Nr.

EP4779064

Anmeldetag

10. September 2024

Veröffentlichung

20. März 2025

Rechtsraum

EP

IPC

C30B29/16, C23C16/40

Abstract

The present invention provides a laminate including a crystalline substrate, a first crystalline layer formed on a main surface of the crystalline substrate either directly or with another layer interposed therebetween, the first crystalline layer being composed primarily of a first crystalline metal oxide semiconductor, and a second crystalline layer formed on the first crystalline layer either directly or with another layer interposed therebetween, the second crystalline layer being composed primarily of a second crystalline metal oxide semiconductor, in which the second crystalline metal oxide semiconductor has the same composition as the first crystalline metal oxide semiconductor, and has a different crystalline phase from the first crystalline metal oxide semiconductor. Accordingly, it is possible to provide a laminate containing a crystalline metal oxide semiconductor with excellent physical properties that enable the manufacture of a high-performance semiconductor device, and a method for easily, inexpensively, and stably manufacturing such a laminate.

Anmelder

Firmen

SHIN-ETSU CHEMICAL CO., LTD.
Kochi Prefectural Public University Corporation

Land

🇯🇵 Japan

Fachgebiete