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EP4779638 22. Juli 2026

Anmelder: SK hynix Inc. 🇰🇷

Details

Veröffentlichungs-Nr.
EP4779638
Anmeldetag
10. November 2025
Veröffentlichung
22. Juli 2026
Rechtsraum
EP
Offizieller Volltext

Abstract

A memory device includes a first command address decoder configured to decode a first chip selection signal and first command address signals and generate first control signals, a second command address decoder configured to decode a second chip selection signal and second command address signals and generate second control signals during a multi-channel mode and configured to decode the second chip selection signal and the first command address signals and generate second control signals during a multi-rank mode, a first memory core including first memory cells and being controlled by the first control signals, and a second memory core including second memory cells and being controlled by the second control signals.

Anmelder

Firma
SK hynix Inc.
Land
🇰🇷 Südkorea
🇰🇷 SK hynix

Südkoreanischer Halbleiterhersteller, der Speicherchips wie DRAM und NAND-Flash für Computer, Server und mobile Geräte produziert.

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