Mehrkanalspeicheranordnung
Anmelder: SK hynix Inc. 🇰🇷
Details
- Veröffentlichungs-Nr.
- EP4779638
- Anmeldetag
- 10. November 2025
- Veröffentlichung
- 22. Juli 2026
- Rechtsraum
- EP
Abstract
A memory device includes a first command address decoder configured to decode a first chip selection signal and first command address signals and generate first control signals, a second command address decoder configured to decode a second chip selection signal and second command address signals and generate second control signals during a multi-channel mode and configured to decode the second chip selection signal and the first command address signals and generate second control signals during a multi-rank mode, a first memory core including first memory cells and being controlled by the first control signals, and a second memory core including second memory cells and being controlled by the second control signals.
Anmelder
- Firma
- SK hynix Inc.
- Land
- 🇰🇷 Südkorea
Südkoreanischer Halbleiterhersteller, der Speicherchips wie DRAM und NAND-Flash für Computer, Server und mobile Geräte produziert.
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