Halbleiteranordnung mit Speicherknoten und Verfahren zu deren Herstellung

Details

Veröffentlichungs-Nr.

EP4780158

Anmeldetag

5. Dezember 2025

Veröffentlichung

22. Juli 2026

Rechtsraum

EP

IPC

H10B12/00, H10D1/68

Abstract

A semiconductor device including a storage node and a method of fabricating the same is provided. In the method of fabricating the semiconductor device, an insulation layer is formed over a substrate, and a first hole and a second hole that penetrate the insulation layer are formed. A recess is formed in the insulation layer to overlap the first hole. A first conductive pattern that fills the first hole and the recess and a second conductive pattern that fills the second hole are formed. A third conductive pattern connected to the second conductive pattern is formed.

Anmelder

Firma

SK hynix Inc.

Land

🇰🇷 Südkorea

Fachgebiete