Speichervorrichtung, Speichersystem und Verfahren zur Datenberechnung mit der Speichervorrichtung

EP4783169 29. Juli 2026

Anmelder: Yangtze Memory Technologies Co., Ltd. 🇨🇳

Details

Veröffentlichungs-Nr.
EP4783169
Anmeldetag
27. Dezember 2023
Veröffentlichung
29. Juli 2026
Rechtsraum
EP
IPC
G11C11/54
Offizieller Volltext

Abstract

A memory device, a memory system, and a method for data calculation with the memory device are provided. The memory device includes an array of memory cells and a peripheral circuit coupled to the memory cells is provided. The peripheral circuit includes a static random-access memory (SRAM) configured to obtain first data transmitted from a data interface of the memory device, page buffers configured to sense second data from the array of memory cells, and at least one process unit coupled to the SRAM and the page buffers via a data-path bus of the peripheral circuit. At least one process unit is configured to perform calculation based on the first data and the second data. The peripheral circuit further includes a control logic configured to program the second data into the array of memory cells.

Anmelder

Firma
Yangtze Memory Technologies Co., Ltd.
Land
🇨🇳 China
🇨🇳 Yangtze Memory Technologies

Chinesisches Unternehmen aus Wuhan, das NAND-Flash-Speicherchips entwickelt und produziert.

996 Patente in unserer Datenbank

Noch Fragen?

Wir helfen Ihnen gerne weiter. Schreiben Sie uns einfach.

Kontakt aufnehmen