Herstellungsverfahren für eine Impfkristallschicht, Metallverbindungsverfahren und Halbleiterprozesseinrichtung

Details

Veröffentlichungs-Nr.

EP4783234

Anmeldetag

9. Oktober 2024

Veröffentlichung

1. Mai 2025

Rechtsraum

EP

IPC

H01L21/768

Abstract

The present disclosure discloses a seed layer formation method, a metal interconnection process method, and semiconductor process equipment. The seed layer formation method includes: depositing a metal seed layer on a substrate having vias or trenches on a surface thereof, stopping deposition of the metal seed layer when openings of the vias or trenches are reduced to an extent that metal ions cannot enter the vias or trenches, oxidizing the surface of the substrate to transform the metal seed layer on the surface of the substrate and a portion of the metal seed layer at the openings of the vias or trenches into metal oxides, placing the substrate in a solution capable of dissolving the metal oxides to dissolve the metal oxides on the surface of the substrate and at the openings of the vias or trenches, thereby reopening the openings of the vias or trenches. The present disclosure enables increased seed layer coverage at the bottoms and sidewalls of vias or trenches, preventing voids from forming during subsequent metal electroplating.

Anmelder

Firma

Beijing NAURA Microelectronics Equipment Co., Ltd.

Land

🇨🇳 China

Fachgebiete