Hochfrequenzleistungsverstärker und Kommunikationsvorrichtung

Details

Veröffentlichungs-Nr.

EP4783458

Anmeldetag

1. Dezember 2025

Veröffentlichung

29. Juli 2026

Rechtsraum

EP

Abstract

A radio frequency power amplifier includes a supporting substrate and a first amplifying branch. The supporting substrate is provided with a ground terminal. The first amplifying branch includes a first connection terminal, a second connection terminal, a first impedance matching network, a second impedance matching network, a first transistor and a first parasitic capacitance resonance network. The first transistor includes a gate and a drain. The first impedance matching network is electrically connected between the first connection terminal and the gate of the first transistor. The second impedance matching network is electrically connected between the drain of the first transistor and the second connection terminal. The first parasitic capacitance resonance network is electrically connected between the drain of the first transistor and the ground terminal. Compared with the prior art, the amplification efficiency of the radio frequency power amplifier can be improved.

Anmelder

Firma

Xiamen San'an Integrated Circuit Co., Ltd.

Land

🇨🇳 China