Halbleiterbauelement und Elektronisches System mit dem Halbleiterbauelement
Anmelder: Samsung Electronics Co., Ltd. 🇰🇷
Details
- Veröffentlichungs-Nr.
- EP4788085
- Anmeldetag
- 12. August 2025
- Veröffentlichung
- 5. August 2026
- Rechtsraum
- EP
Abstract
A semiconductor device includes a gate stacking structure (120), a channel structure (CH), a cover insulation layer (168a), and a common source layer (170). The gate stacking structure (120) has a first surface (120a) and a second surface opposite to each other, and includes a plurality of interlayer insulation layers (132m) and a plurality of gate electrodes (130) alternately stacked on each other. The channel structure (CH) includes a channel penetration portion (CHa) and a channel expanded portion (CHb). The channel structure (CH) includes a channel layer (140) and a gate dielectric layer (150). The gate dielectric layer (150) includes a first dielectric portion (150a) in the channel penetration portion (CHa) and a second dielectric portion (150b) extending from the first dielectric portion (150a) in a horizontal direction at a portion adjacent to the first surface (120a) of the gate stacking structure (120).
Anmelder
- Firma
- Samsung Electronics Co., Ltd.
- Land
- 🇰🇷 Südkorea
Südkoreanischer Elektronikkonzern und Teil der Samsung-Gruppe. Entwickelt und produziert Halbleiter, Speicherchips, Displays, Smartphones, Unterhaltungselektronik sowie Haushaltsgeräte für den globalen Markt.
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