System und Verfahren zur Tauchkühlung von Halbleitergehäusen

Details

Veröffentlichungs-Nr.

EP4791133

Anmeldetag

2. Februar 2026

Veröffentlichung

12. August 2026

Rechtsraum

EP

IPC

H05K7/20

Abstract

Disclosed herein are methods, devices and systems including a supporting board (110) and a first cooling structure (102) on the supporting board (110), the first cooling structure (102) including a first high-power density package immersed within a first dielectric fluid (106), the first dielectric fluid (106) thermally coupled to the first high-power density package. A first connector (108) is arranged between the first cooling structure (102) and the supporting board (110) and communicatively couples the first high-power density package to the supporting board (110). The first dielectric fluid (106) is separated from the first connector (108) by at least one surface of the first cooling structure (102). The first dielectric fluid may have a first liquid phase and a first vapor phase within the first cooling structure (102).

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete