Integrierte Schaltungsstrukturen mit Nanobandtransistoren und Rückseitenkondensatoren

Details

Veröffentlichungs-Nr.

EP4791140

Anmeldetag

18. Dezember 2025

Veröffentlichung

12. August 2026

Rechtsraum

EP

Abstract

Disclosed herein are IC structures with nanoribbon transistors and backside capacitors, and related methods and devices. In one aspect, an IC structure includes a nanoribbon including a semiconductor material and a transistor including a channel portion and first and second source/drain (S/D) regions, wherein the channel portion includes a portion of the semiconductor material of the nanoribbon and has a front side and a back side, and the first and second S/D regions are at the opposite ends of the channel portion. The IC structure further includes a contact structure in conductive contact with the first S/D region and a capacitor in conductive contact with the second S/D region, wherein the contact structure is at the front side of the channel portion and the capacitor is at the back side of the channel portion.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA