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EP4791151 12. August 2026

Anmelder: SK hynix Inc. 🇰🇷

Details

Veröffentlichungs-Nr.
EP4791151
Anmeldetag
29. Oktober 2025
Veröffentlichung
12. August 2026
Rechtsraum
EP
IPC
H10F39/00
Offizieller Volltext

Abstract

An image sensing device includes a substrate including a first surface and a second surface opposite to the first surface; a first well region including impurities of a first conductivity type and disposed in the substrate to be in contact with the second surface; a second well region including impurities of a second conductivity type opposite to the first conductivity type and disposed in the substrate to be in contact with the first well region; a first interconnect electrically connected to the first well region through a first contact plug; a second interconnect electrically connected to the second well region through a second contact plug; and a field-dispersion electrode connected to a third interconnect through a third contact plug and disposed to cover an edge region of the second well region between the first contact plug and the second contact plug.

Anmelder

Firma
SK hynix Inc.
Land
🇰🇷 Südkorea
🇰🇷 SK hynix

Südkoreanischer Halbleiterhersteller, der Speicherchips wie DRAM und NAND-Flash für Computer, Server und mobile Geräte produziert.

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