Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4791175

Anmeldetag

3. Februar 2026

Veröffentlichung

12. August 2026

Rechtsraum

EP

Abstract

A semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface, a first active pattern on the first surface of the substrate and extending in a first direction, a first gate structure on the first active pattern and extending in a second direction intersecting the first direction, a first epitaxial pattern on at least one side of the first gate structure and connected to the first active pattern, a first frontside source/drain contact on a first surface of the first epitaxial pattern and connected to the first epitaxial pattern, a frontside wiring structure on a first surface of the first frontside source/drain contact and connected to the first frontside source/drain contact, and an insulating pattern on a second surface of the first gate structure and extending in the second direction.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea