Asic-Verkappte Doppelschicht-Mems-Plattform

Details

Veröffentlichungs-Nr.

EP4793223

Anmeldetag

17. Februar 2025

Veröffentlichung

19. August 2026

Rechtsraum

EP

IPC

B81B7/00, B81C1/00

Abstract

The disclosure relates to a microelectromechanical (MEMS) device and to a method of manufacturing a MEMS device. The MEMS device comprises a a cap layer, two MEMS device layers and an ASIC layer, while the cap layer and the ASIC layer enclose functional elements of the two MEMS device layers in an enclosure. Digital signals, ground and operating voltage of ASIC circuitry are coupled with outside of the MEMS device through one or more ASIC signal through-silicon-vias traveling through the two MEMS device layers and the cap layer.

Anmelder

Firma

Murata Manufacturing Co., Ltd.

Land

🇯🇵 Japan