Supraleitende, Nichtflüchtige Speicherzelle, Verfahren zum Schreiben und Verfahren zum Lesen Derselben

Details

Veröffentlichungs-Nr.

EP4793951

Anmeldetag

10. Februar 2026

Veröffentlichung

19. August 2026

Rechtsraum

EP

IPC

G11C11/44

Abstract

A non-volatile superconducting memory cell containing type-II superconductors, adapted to operate at a temperature (T0) below the critical temperature (Tc) of the superconductors and under a magnetic field (B) with a magnetic induction exceeding the critical value (B0) for the type-II superconductor and consisting of a serial connection of the first superconducting line (103), the superconducting trap (101), the Dayem bridge (102), and the second superconducting line (106), according to the invention, is characterized in that the dimensions (Wt, Lt) of the superconducting trap (101) and the dimensions (Wb, Lb) of the Dayem bridge (102) and the magnetic field induction value (B) are selected such that the superconducting vortex expulsion current (IOUT) is lower than the first critical current (IC1) and the first critical current ( IC1) is lower than the second critical current (IC2). The object of the invention is also a method of writing and a method of reading.

Anmelder

Firma

Instytut Fizyki Polskiej Akademii Nauk

Land

🇵🇱 Polen

Fachgebiete