Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4794472

Anmeldetag

7. Oktober 2025

Veröffentlichung

19. August 2026

Rechtsraum

EP

Abstract

A semiconductor device includes a substrate, a first conductivity type semiconductor layer on a first surface of the substrate and penetrated by a first trench and a second trench, a gate electrode in the first trench and including a first side surface and a second side surface opposing each other, a first gate insulating layer on the first side surface and a lower surface of the gate electrode, a second conductivity type doping layer on the first conductivity type semiconductor layer and covering a portion of a side surface of the first gate insulating layer, a first conductivity type doped region on the second conductivity type doping layer and covering another portion of the side surface of the first gate insulating layer, a source electrode on the first conductivity type doped region, a drain electrode on a second surface of the substrate and a shielding pattern around the second trench.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea