Musterungsverfahren zur Verwendung in der Halbleiterverarbeitung

Details

Veröffentlichungs-Nr.

EP4796998

Anmeldetag

20. Februar 2025

Veröffentlichung

26. August 2026

Rechtsraum

EP

Abstract

A pattern is produced in a die area (25) of a layer (30,33) formed on a support substrate (32) by at least two process sequences, each comprising a lithography step and an etch step, performed in adjacent subportions of the die area. One or more parallel line shaped features (28) of the pattern extend from the first subportion (25a) of the die area to the second subportion (25b), i.e. across the border (27) between the die areas. Mutually aligned and spaced apart first and second parts of the line features are printed in the respective process sequence steps and transferred to the layer in the form of negative or positive pattern features in the patterned layer, i.e. in the form of trenches (28'a,28'b) in the layer or in the form of lines separated by mutually aligned trenches (37a;37b). In either case, directional etching is thereafter applied to stretch the aligned trenches and thereby obtain the desired line features (28) extending from one subportion of the die area to the other subportion.

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien