Nichtflüchtige Speichervorrichtung, Speichervorrichtung und Verfahren zum Betrieb der Speichervorrichtung

Details

Veröffentlichungs-Nr.

EP4797266

Anmeldetag

16. Februar 2026

Veröffentlichung

26. August 2026

Rechtsraum

EP

IPC

G11C7/10, G11C16/26, G11C16/32

Abstract

Provided are non-volatile memory devices, storage devices, and methods of operating the storage devices. The non-volatile memory device includes a memory interface circuit including a data pin configured to output a data signal, a command address pin separated from the data pin and configured to receive a first data output packet, and a first pin configured to receive a toggle signal corresponding to the first data output packet, a first page buffer configured to output first data in response to the first data output packet, and a first register configured to provide the first data to the memory interface circuit through a first path based on receiving a first clock signal generated based on the toggle signal, and provide the first data to the memory interface circuit through a second path different from the first path in response to receiving a second clock signal different from the first clock signal.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete