Verfahren zur Herstellung Länglicher Strukturmerkmale durch Anwendung von Direktionalem Ätzen
Anmelder: Imec VZW 🇧🇪
Details
- Veröffentlichungs-Nr.
- EP4797316
- Anmeldetag
- 20. Februar 2025
- Veröffentlichung
- 26. August 2026
- Rechtsraum
- EP
Abstract
A stack of alternatingly applied etch stop layers (27) and mask layers (28) is produced on a target layer (25) present on a support substrate (26). The target layer is to be patterned according to a pattern comprising parallel line features (34,34'). The top mask layer is patterned according to a pattern of openings (30) and thereafter these openings are elongated by directional etching relative to the etch stop layer, to form a pattern of elongated openings (31,31'). This pattern is transferred to the subsequent mask layer (28) and in said subsequent mask layer, the elongated openings are further elongated by directional etching. This sequence is repeated down to the bottom mask layer. In said bottom mask layer, the pattern of openings has been elongated to a set of lines (34,34'), which are then transferred to the target layer. By repeating the elongation process a number of times, the obtainable elongation is increased compared to a process wherein only one directional etch step is applied.
Anmelder
- Firma
- Imec VZW
- Land
- 🇧🇪 Belgien
Imec ist ein belgisches Forschungszentrum mit Sitz in Leuven, das auf Nanoelektronik, Halbleitertechnologie und digitale Technologien spezialisiert ist.
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