Verfahren zur Herstellung Länglicher Strukturmerkmale durch Anwendung von Direktionalem Ätzen

Details

Veröffentlichungs-Nr.

EP4797320

Anmeldetag

20. Februar 2025

Veröffentlichung

26. August 2026

Rechtsraum

EP

IPC

H01L21/3065, H01L21/033

Abstract

A layer (28) is produced on an etch stop layer (27) formed on a support substrate. The layer is patterned by forming at least one opening (30) having upright sidewalls through the full thickness of the layer. The opening is enlarged by a sequence of directional etch steps wherein the angle of incidence of the applied plasma beam (8) is increased at every subsequent step compared to the previous step, so that the plasma beam impinges on the full height of the sidewall of the opening (30) or enlarged opening (31) at every step. Subsequent directional etch steps can be performed in the same scanning direction at each step, or the scanning direction can be changed at every step or combinations of equal and differing scanning directions can be applied, enabling thereby to obtain various shapes of pattern features. The adjustment of the angle of incidence enables a higher etch rate in the scanning direction and thereby a higher obtainable elongation compared to methods wherein repeated directional etch steps are performed applying he same angle of incidence at each step.

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien

Fachgebiete