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Details

Veröffentlichungs-Nr.

EP4797897

Anmeldetag

21. Februar 2025

Veröffentlichung

26. August 2026

Rechtsraum

EP

Abstract

In some examples, an integrated circuit comprises a logic region comprising multiple transistors each having a channel thickness and a channel width, and a memory region comprising multiple transistors each having a channel thickness and a channel width, wherein a channel thickness of each transistor in the logic region is smaller than a channel thickness of each transistor in the memory region, wherein a gate length of each transistor in the memory region is longer than the gate length of each transistor in the logic region, wherein each of the multiple transistors in the logic region comprises a first number of nanosheets, wherein each of the multiple transistors in the memory region comprises a second number of nanosheets, wherein the first number of nanosheets and the second number of nanosheets are the same.

Anmelder

Firma

Huawei Technologies Co., Ltd.

Land

🇨🇳 China