Horizontale Speicherstrukturen in Logischen Vorrichtungen und Verfahren zu deren Herstellung

Details

Veröffentlichungs-Nr.

EP4797898

Anmeldetag

2. Dezember 2025

Veröffentlichung

26. August 2026

Rechtsraum

EP

Abstract

A circuit device (100) includes a semiconductor substrate (102) having a first transistor structure (104). The first transistor structure includes at least one first channel region (106) extending between first source/drain regions (108), first source/drain contacts (110) on the first source/drain regions, respectively, and a first gate (112) on the at least one channel region between the first source/drain contacts. A first spacer (115) electrically isolates one of the first source/drain regions from one of the first source/drain contacts thereon. Related devices and fabrication methods are also discussed.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea