Kondensatorstruktur und Verfahren zu Ihrer Herstellung sowie Halbleiterbauelement mit der Kondensatorstruktur

Details

Veröffentlichungs-Nr.

EP4797901

Anmeldetag

23. Januar 2026

Veröffentlichung

26. August 2026

Rechtsraum

EP

Abstract

An example capacitor structure includes a lower electrode structure (70), a dielectric pattern (95) and an upper electrode (105). The lower electrode structure (70) includes a first lower electrode (65) on a substrate (10), and a second lower electrode (62) on a sidewall of the first lower electrode (65). The second lower electrode (62) includes an alloy of a first metal and a second metal. The dielectric pattern (95) is disposed on a surface of the lower electrode structure (70). The upper electrode (105) is disposed on a surface of the dielectric pattern (95). The second lower electrode (62) has a thickness varying in a vertical direction perpendicular to an upper surface of the substrate (10). A weight ratio between the first metal and the second metal is uniform in the vertical direction in the second lower electrode (62).

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea