Halbleiteranordnung
Anmelder: SK hynix Inc. 🇰🇷
Details
- Veröffentlichungs-Nr.
- EP4797927
- Anmeldetag
- 3. Dezember 2025
- Veröffentlichung
- 26. August 2026
- Rechtsraum
- EP
Abstract
A semiconductor device including a substrate; an insulating layer disposed on the substrate, and including an outer boundary; a passivation layer disposed on the insulating layer, and including an inner boundary that is located inward of the outer boundary; a dummy pattern layer having a lower surface that forms the same plane with the lower surface of the passivation layer, overlapping at least a part of a region disposed between the outer and inner boundaries, and having a side surface that is located inward of the inner boundary; and a redistribution pattern layer disposed on the dummy pattern layer.
Anmelder
- Firma
- SK hynix Inc.
- Land
- 🇰🇷 Südkorea
Südkoreanischer Halbleiterhersteller, der Speicherchips wie DRAM und NAND-Flash für Computer, Server und mobile Geräte produziert.
136 Patente in unserer Datenbank
Vertreten von
-
Isarpatent
Isarpatent · München