Integrierte Schaltungen mit einer an eine Bindungsschicht Angrenzenden Wärmeverwaltungsschicht für Verbesserte Wärmeableitung

Details

Veröffentlichungs-Nr.

EP4797931

Anmeldetag

5. Dezember 2025

Veröffentlichung

26. August 2026

Rechtsraum

EP

Abstract

Techniques are provided herein to form semiconductor dies (or integrated circuits) with a thermally conductive layer adjacent to a bond interface to enhance the thermal dissipation from the semiconductor devices. A semiconductor die or integrated circuit includes any number of semiconductor devices within a device layer. A frontside interconnect region is provided above the device layer to, for example, route signals between the various semiconductor devices in the device layer. A thermally conductive layer may be provided above the frontside interconnect region, such as on a top-most layer of the frontside interconnect region. The thermally conductive layer includes a material having a thermal conductivity of, for example, at least 1.5 W/m·K. A bond layer may be provided adjacent (e.g., directly above or directly below) the thermally conductive layer and may be any suitable dielectric material, such as silicon dioxide.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA