Dickes Gateoxid und Nur-Hf-Interposer mit Aluminiumdurchgangs- und Kantendichtungsstrukturen
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4797935
- Anmeldetag
- 3. Februar 2026
- Veröffentlichung
- 26. August 2026
- Rechtsraum
- EP
Abstract
An interposer structure and fabrication method are disclosed by providing a wafer substrate in which is formed FEOL transistors with gate oxides having a minimum specified thickness, forming a BEOL ILD stack with interconnect structures on the wafer substrate, selectively etching openings extending at least part way down through the BEOL ILD stack, filling the etch openings with at least deposited aluminum to form a plurality of aluminum via structures and aluminum crack stop structures extending from a top surface of the BEOL ILD stack at least part way down through the BEOL ILD stack, and partially recessing a bottom surface of the wafer substrate layer to expose at least the aluminum crack stop structures.
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
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