Verfahren zur Züchtung eines Siliciumcarbidkristalls

Details

Veröffentlichungs-Nr.

EP4803673

Anmeldetag

15. Juli 2025

Veröffentlichung

9. September 2026

Rechtsraum

EP

IPC

C30B23/02, C30B29/36

Abstract

The present disclosure provides a method for growing a silicon carbide crystal. During the growth process, the sublimed silicon carbide raw material passes through the porous silicon to reach the surface of the seed crystal. The abundant capillary channels in the porous silicon can filter carbon particles from the gas flow, preventing the carbon particles from adhering to the surface of the seed crystal and reducing the formation of carbon particle inclusions in the silicon carbide single crystal. The filtered carbon particles will react with the porous silicon to form SiC, and as the growth temperature increases, the SiC acts as a raw material and is decomposed into Si and C. Additionally, the porous silicon acts as a source of Si during the growth process, to balance the carbon-to-silicon ratio in the gas phase. This prevents excessive carbon from precipitating as carbon particles on the surface of the seed crystal, thereby avoiding the formation of carbon particle inclusions, as well as microtubes and dislocations evolved from the carbon particle inclusions.

Anmelder

Firmen

Shenzhen Major Industry Investment Group & Tankeblue Semiconductor Co., Ltd.
Tankeblue Semiconductor Co. Ltd
JIANGSU TANKEBLUE SEMICONDUCTOR CO., LTD

Land

🇨🇳 China

Fachgebiete