Integrierte Schaltungsstrukturen mit Nanobandtransistoren und Selbstausgerichteten Rückseitigen Source-/drain-Kontakten

Details

Veröffentlichungs-Nr.

EP4804755

Anmeldetag

18. Dezember 2025

Veröffentlichung

9. September 2026

Rechtsraum

EP

Abstract

Disclosed herein is a fabrication method that allows forming backside source and/or drain (S/D) contacts that are self-aligned to corresponding S/D regions of a transistor, and related integrated circuit (IC) structures and devices. In one aspect, a resulting IC structure may include a transistor and a nanoribbon comprising a semiconductor material. A channel portion of the transistor includes a portion of the semiconductor material of the nanoribbon and has a front side and a back side. A first conductive contact is at the front side of the channel portion and is in conductive contact with a first S/D region of the transistor. A second conductive contact is at the back side of the channel portion and is in conductive contact with a second S/D region of the transistor. Furthermore, the second conductive contact is self-aligned to the second S/D region of the transistor.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA