Integrierte Schaltungsstrukturen mit Nanobandtransistoren und C-Clamp-Source-Drain-Kontakten

Details

Veröffentlichungs-Nr.

EP4804756

Anmeldetag

18. Dezember 2025

Veröffentlichung

9. September 2026

Rechtsraum

EP

Abstract

Disclosed herein are integrated circuit (IC) structures with nanoribbon transistors and C-clamp source and/or drain (S/D) contacts, and related methods and devices. In one aspect, an example IC structure may include a transistor having a channel portion in a nanoribbon, and a conductive contact to a region of the transistor, where the region is one of a source region or a drain region of the transistor and where, in a cross-sectional side view of the IC structure, the conductive contact has a C-shape.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA