Halbleitervorrichtung und Verfahren zu Ihrer Herstellung

Details

Veröffentlichungs-Nr.

EP4804782

Anmeldetag

16. Januar 2026

Veröffentlichung

9. September 2026

Rechtsraum

EP

Abstract

A semiconductor device includes a backside wiring line including a first side and a second side opposite to the first side in a first direction, a lower pattern on the first side of the backside wiring line, the lower pattern including a first side and a second side opposite to the first side in the first direction, where the second side of the lower pattern faces the backside wiring line, a sheet pattern on the first side of the lower pattern, and that is spaced apart from the lower pattern in the first direction, a first source/drain pattern on the lower pattern and connected to the sheet pattern, and an active region insulating pattern contacting the lower pattern, the active region insulating pattern including a line portion and a protruding portion, the line portion of the active region insulating pattern extending along the second side of the lower pattern.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea