Integriertes Schaltungsgehäuse mit einem Substrat mit dem Ersten Ansatz von Leitfähigen Kontakten auf der Gehäusesubstratseite

Details

Veröffentlichungs-Nr.

EP4804784

Anmeldetag

5. Dezember 2025

Veröffentlichung

9. September 2026

Rechtsraum

EP

IPC

H10W72/20

Abstract

Accordingly, substrates for multi-die IC packages, and related assemblies, devices and methods, are disclosed herein. For example, in some embodiments, a substrate may include a dielectric material having a first surface and an opposing second surface, wherein the first surface includes a protruding portion; a conductive contact on the protruding portion of the first surface of the dielectric material; and a conductive pathway through the dielectric material and coupled to the conductive pathway. In some embodiments, the protruding portion of the first surface of the dielectric material has a thickness between 3 microns and 10 microns.

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA

Fachgebiete