System und Verfahren zur Inspektion von Halbleiterbauelementen und Verfahren zur Herstellung der Vorrichtungen mit dem Verfahren

Details

Veröffentlichungs-Nr.

EP4807359

Anmeldetag

5. März 2026

Veröffentlichung

16. September 2026

Rechtsraum

EP

Abstract

Provided is a method of inspecting semiconductor devices, the method including selecting a type of a target structure and a type of a target defect to be inspected, selecting a filter based on the target structure and the target defect, performing an ultrasonic signal simulation based on the target structure, selecting, based on the ultrasonic signal simulation, a type of a probe configured to generate an ultrasonic signal by applying a vibration to the semiconductor device, setting a frequency of the vibration based on the ultrasonic signal simulation, generating the ultrasonic signal by applying, using the tip, the vibration to the semiconductor device, measuring the ultrasonic signal, processing the measured ultrasonic signal using the selected filter, performing a fitting for each of a signal generated by the ultrasonic signal simulation and the measured ultrasonic signal processed by the selected filter, and determining an accuracy of the fitting.

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Firmen

Samsung Electronics Co., Ltd.
Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO

Land

🇰🇷 Südkorea