Verfahren zur Herstellung einer Verbindungsstruktur

Details

Veröffentlichungs-Nr.

EP4807741

Anmeldetag

14. März 2025

Veröffentlichung

16. September 2026

Rechtsraum

EP

Abstract

There is provided a method for forming an interconnect structure for an integrated circuit device, the method comprising: forming a workpiece for a second interconnect layer on a sacrificial substrate, wherein the workpiece comprises at least a first workpiece metal layer epitaxially grown on a growth surface of the sacrificial substrate; bonding the workpiece to an initial interconnect structure of a device wafer, the initial interconnect structure comprising a first interconnect layer surrounded by an interlayer dielectric layer; subsequent to the bonding, removing the sacrificial substrate from the first workpiece metal layer; and patterning the workpiece comprising the first workpiece metal layer to form a second interconnect layer over the first interconnect layer.

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien