Ein Gate-Definiertes Quantenpunkt-Bauelement mit Ferromagnetischen Vias, die die Gates Kontaktieren

Details

Veröffentlichungs-Nr.

EP4808307

Anmeldetag

14. März 2025

Veröffentlichung

16. September 2026

Rechtsraum

EP

Abstract

In a quantum dot device according to the invention, a plurality of gates (1,2) is provided on a gate dielectric layer (4) formed on a semiconductor substrate (3) configured to confine qubits in well-defined quantum dots. Via connections (10,18) which are directly contacting the gates include at least one or more via connections formed of an electrically conductive ferromagnetic material, whereas the via connections which are contacting the remaining gates are not formed of a ferromagnetic material. Also, the material of the gates (1,2) is electrically conductive but not ferromagnetic. The invention thereby enables addressing and controlling individual qubits associated to gates contacted by ferromagnetic via connections (10) which are configured to act as permanent magnets in the operative quantum dot device.

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien