Kurzwelleninfrarotpixel auf Basis von Nichtstreuenden Nanostrukturen

Details

Veröffentlichungs-Nr.

EP4808313

Anmeldetag

12. Februar 2026

Veröffentlichung

16. September 2026

Rechtsraum

EP

Abstract

Provided are systems, methods, and apparatuses for short-wave infrared pixels based on non-scattering nanostructures. In one or more examples, a pixel of a of an image sensor comprises a back reflector (205) formed on a substrate, the back reflector being configured to reflect electromagnetic radiation; a first doped region of a first semiconductor formed adjacent to the back reflector (205); an absorption region of a second semiconductor configured as a photodetector (210) of the pixel, the absorption region being formed adjacent to at least a portion of the first doped region; a second doped region of the first semiconductor formed adjacent to the absorption region, the second doped region being configured to pass the electromagnetic radiation to the absorption region; and a nanostructure (230) formed adjacent to the second doped region, the nanostructure (230) being configured to: steer light that passes through the nanostructure (230) towards the absorption region; and steer, towards the absorption region, a portion of the light that reflects off the back reflector (205).

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea