Herstellungsverfahren für einen Sic-Volumen-Einkristall und Sic-Quellenmaterial zur Verwendung in Solch einem Herstellungsverfahren

Details

Veröffentlichungs-Nr.

EP4810675

Anmeldetag

21. März 2025

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

The method is intended for the production of at least one SiC volume monocrystal (2) by sublimation growth. Prior to the start of growth, at least one SiC seed crystal (8) is arranged in a crystal growth region (5) of a growing crucible (3), and SiC source material (6) is provided and inserted into a SiC storage region (4) of the growing crucible (3). During the growth by means of sublimation of the SiC source material (6) and by means of transport of the sublimated gaseous components into the crystal growth region (5), a SiC growth gas phase (9) is produced in the crystal growth region (5), in which a SiC volume monocrystal (2) grows on the SiC seed crystal (8) by means of deposition from the SiC growth gas phase (9). A ratio of carbon atoms to silicon atoms in the provided SiC source material (6) is at least 1.01:1, in particular at least 1.05:1.

Anmelder

Firma

SiCrystal GmbH

Land

🇩🇪 Deutschland