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Details

Veröffentlichungs-Nr.

EP4811359

Anmeldetag

11. März 2026

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

A system and a method for a data transfer in a memory circuit are disclosed. The memory circuit includes a data transfer circuit (425), a column select, CS, decoder (412), and an access decoder (414). The data transfer circuit (425) includes a select switch configured to connect a local input/output, LIO, line to a bit line, BL, of a memory cell in a memory section (420) and a data switch configured to route data between LIO line and a global input/output, GIO, line connected to a data bus in response to an access operation. The CS decoder (412) is configured to decode a first part of a column address, CA, of the access operation to generate a CS signal that enables the select switch. The access decoder (414) is configured to decode a second part of the CA (430) and an access signal to generate an access enable, AE, signal that enables the data switch.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea