Nichtflüchtige Speichervorrichtung und Steuerungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4811361

Anmeldetag

14. August 2025

Veröffentlichung

23. September 2026

Rechtsraum

EP

IPC

G11C11/56, G11C16/34

Abstract

According to one embodiment, a control circuit (24) executes a read operation of simultaneously selecting two adjacent word lines (WL(n+1), WL(n-1)) adjacent to a read target word line (WL(n)) using a first voltage for determining whether or not threshold voltages of two adjacent memory cells connected respectively to the two adjacent word lines (WL(n+1), WL(n-1)) are threshold voltages of a first state or lower. Based on the result of the read operation, the control circuit (24) selects one date among data which is read from a memory cell of the read target word line (WL(n)) using first read voltages and data which is read from the memory cell of the read target word line (WL(n)) using second read voltages that are respectively lower than the first read voltages.

Anmelder

Firma

Kioxia Corporation

Land

🇯🇵 Japan

Fachgebiete