Halbleiterstruktur und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4811957

Anmeldetag

14. Januar 2026

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

A semiconductor structure includes an epitaxial layer on a substrate, a first lightly doped layer on the epitaxial layer, a second lightly doped layer on the first lightly doped layer, a heavily doped layer on the first lightly doped layer, a metal silicide layer on the second lightly doped layer and the heavily doped layer, and a gate structure, which extends from a top surface of the metal silicide layer toward the substrate, through the second lightly doped layer, the heavily doped layer and the first lightly doped layer, and into the epitaxial layer. A doping concentration of the second lightly doped layer at an interface between the second lightly doped layer and the metal silicide layer is less than a doping concentration of the heavily doped layer and greater than a doping concentration of the first lightly doped layer. A method of manufacturing the semiconductor structure is also provided.

Anmelder

Firma

Diodes Incorporated

Land

🇺🇸 USA