Halbleiterbauelement und Halbleiterspeichervorrichtung

Details

Veröffentlichungs-Nr.

EP4811959

Anmeldetag

18. September 2025

Veröffentlichung

23. September 2026

Rechtsraum

EP

IPC

H10D30/67

Abstract

A semiconductor device of embodiments includes a first electrode, a second electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode surrounding the oxide semiconductor layer, and a gate insulating layer. The gate electrode includes a first layer containing a first material having a first work function, a second layer provided on the first electrode side with respect to the first layer and containing a second material having a second work function, and a third layer provided on the second electrode side with respect to the first layer and containing a third material having a third work function. When the first conductive type is n-type, the second work function is smaller than the first work function, and the third work function is smaller than the first work function.

Anmelder

Firma

Kioxia Corporation

Land

🇯🇵 Japan

Fachgebiete