Halbleiterstruktur und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4811961

Anmeldetag

13. Januar 2026

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

A semiconductor structure includes an epitaxial layer on a substrate and a doped region extending from the top surface of the epitaxial layer into the epitaxial layer. A gate structure extends from the top surface of the doped region into the epitaxial layer. The gate structure includes a first polysilicon structure, a gate oxide layer surrounding the first polysilicon structure, a second polysilicon structure over the first polysilicon structure and the gate oxide layer, and an insulating layer, which separates the first polysilicon structure and the gate oxide layer from the second polysilicon structure and surrounds the second polysilicon structure, and extends between the top surface of the epitaxial layer and a diode string disposed over the epitaxial layer. A source structure adjoins the doped region and the second polysilicon structure, and is electrically coupled to the diode string. A method of manufacturing the semiconductor structure is also provided.

Anmelder

Firma

Diodes Incorporated

Land

🇺🇸 USA