Nitridbasierte Lichtemittierende Diode mit Langer Wellenlänge

Details

Veröffentlichungs-Nr.

EP4811978

Anmeldetag

19. Dezember 2024

Veröffentlichung

26. Juni 2025

Rechtsraum

EP

Abstract

A red light emitting apparatus according to an exemplary embodiment of the present disclosure includes a first conductivity type semiconductor layer; an active region including a barrier layer and a well layer; a strain control layer disposed between the first conductivity type semiconductor layer and the active region; a superlattice layer disposed between the strain control layer and the active region; a second conductivity type semiconductor layer disposed on the active region; and an electron blocking layer disposed between the active region and the second conductivity type semiconductor layer, in which the first conductivity type semiconductor layer and the well layer are expressed by the following formula (1), and an index value P5 representing a band gap of the well layer and an index value P1 representing a band gap of the first conductivity type semiconductor layer satisfy the following equation 1: (Formula 1) A<x>B<y>C<z>D<(1-x-y-z)> (where A is an element selected from Al, In, and Ga, B is an element selected from Al, In, and Ga, C is an element selected from Al, In, and Ga, D is nitrogen, A, B, and C are different elements from one another, x+y+z=0.5, and 0≤x, y, z≤0.5); and αx + βy + γz P 5 − αx + βy + γz P 1 < 0 <img class="EMIRef" id="33b6d9de-83da-49e5-b74d-9351044a24da-ia01" /> (where α, β, and γ represent band gaps of AD, BD, and CD, respectively).

Anmelder

Firma

Seoul Viosys Co., Ltd.

Land

🇰🇷 Südkorea