Ätzverfahren
Anmelder: SCREEN Holdings Co., Ltd. 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP4811998
- Anmeldetag
- 2. März 2026
- Veröffentlichung
- 23. September 2026
- Rechtsraum
- EP
- IPC
- H10P50/66, // H10P50/68
Abstract
In an etching method in accordance with the present invention, ultraviolet rays are irradiated to an etching solution. As a result, OH radicals are generated in the etching solution. Then, etching of a to-be-etched film is performed by the etching solution containing the OH radicals. Accordingly, it becomes possible to efficiently etch the to-be-etched film by using an etching solution on a substrate on which the to-be-etched film is formed to be adjacent to an insulating film.
Anmelder
- Firma
- SCREEN Holdings Co., Ltd.
- Land
- 🇯🇵 Japan
Japanischer Technologiekonzern. SCREEN Holdings stellt Fertigungsanlagen für die Halbleiterindustrie her, insbesondere Wafer-Reinigungs- und Beschichtungssysteme, sowie Druck- und Bildverarbeitungstechnik.
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