Halbleitergehäuse mit einem Umverteilungssubstrat
Anmelder: SK hynix Inc. 🇰🇷
Details
- Veröffentlichungs-Nr.
- EP4812010
- Anmeldetag
- 6. Februar 2026
- Veröffentlichung
- 23. September 2026
- Rechtsraum
- EP
Abstract
A semiconductor package according to embodiments of the present disclosure includes a package substrate; a redistribution substrate bonded to the package substrate by a first bump, and including a dielectric layer and redistribution patterns; a first underfill layer filled in the space between the package substrate and the redistribution substrate; a semiconductor chip bonded to the redistribution substrate by a second bump; and a first molding layer disposed on the redistribution substrate, and surrounding the semiconductor chip, wherein the dielectric layer includes a negative tone dielectric layer that includes polyimide at a mass ratio of 50% or more.
Anmelder
- Firma
- SK hynix Inc.
- Land
- 🇰🇷 Südkorea
Südkoreanischer Halbleiterhersteller, der Speicherchips wie DRAM und NAND-Flash für Computer, Server und mobile Geräte produziert.
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