Verfahren zur Herstellung einer Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4812012

Anmeldetag

8. September 2025

Veröffentlichung

23. September 2026

Rechtsraum

EP

Abstract

A method of manufacturing a semiconductor device includes the steps of: stacking a first layer mainly composed of silicon and including germanium and oxygen on a first wafer; forming a first element and a first bonding electrode in the first wafer; forming a second element and a second bonding electrode in a second wafer; bonding the first wafer and the second wafer via the first bonding electrode and the second bonding electrode; and transmitting a laser light through a first substrate to irradiate the first layer with the laser light, and thereby induce cleavage in the first layer.

Anmelder

Firma

Kioxia Corporation

Land

🇯🇵 Japan