Verfahren und Schaltung zur Überwachung der Sperrschichttemperatur eines Leistungshalbleiters

Details

Veröffentlichungs-Nr.

EP4814457

Anmeldetag

26. März 2025

Veröffentlichung

30. September 2026

Rechtsraum

EP

IPC

G01K7/01

Abstract

Device for sensing a junction temperature of a power semiconductor (1) controlled by a PWM generator (3), comprising a pull-down resistor (10) between a gate and an emitter of said power semiconductor (1), a sense switch (11) connected between said emitter and a ground connection, a command circuit (12) for turning ON and OFF of said sense switch, said command circuit (12) being triggered by said PWM generator (3), a measurement means (13) configured to monitor a voltage response V<E> between said emitter and ground during OFF periods of said sense switch and conversion means to calculate an internal gate resistance R<gin> of the power semiconductor representative of said junction temperature based on said voltage response V<E>.

Anmelder

Firmen

Mitsubishi Electric R&D Centre Europe B.V.
MITSUBISHI ELECTRIC CORPORATION

Land

🇳🇱 Niederlande

Fachgebiete