Halbleiterbauelement mit Aktivem Muster und Leitfähiger Abschirmstruktur

Details

Veröffentlichungs-Nr.

EP4815658

Anmeldetag

10. März 2026

Veröffentlichung

30. September 2026

Rechtsraum

EP

IPC

H10B12/00

Abstract

A semiconductor device includes first and second bit lines each extending in a first direction and adjacent to each other in a second direction perpendicular to the first direction; first and second active patterns each including a first region, a second region, and a channel region between the first and second regions, wherein the first region of the first active pattern is connected to the first bit line in a third direction perpendicular to the first and second directions, and the first region of the second active pattern is connected to the second bit line in the third direction; a word line facing the channel regions of the first and second active patterns; and a conductive shield structure disposed between the first bit line and the second bit line, and between the first region of the first active pattern and the first region of the second active pattern.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete