Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4815667

Anmeldetag

20. November 2025

Veröffentlichung

30. September 2026

Rechtsraum

EP

Abstract

A semiconductor device includes a channel layer (132); a barrier layer (136) positioned on the channel layer and including a material having a different energy band gap from an energy band gap of the channel layer; a gate electrode (155) positioned on the barrier layer; a gate semiconductor layer (152) positioned between the barrier layer and the gate electrode; a gate spacer (200) including a first gate spacer and a second gate spacer positioned on opposite sides of the gate semiconductor layer and spaced apart from each other; a passivation layer (310) positioned on the barrier layer and covering the gate electrode; and a source electrode (170) and a drain electrode (190) positioned on opposite sides of the gate electrode and connected to the channel layer. The first gate spacer and the second gate spacer cover side surfaces of the gate semiconductor layer and cover at least a portion of side surfaces of the gate electrode.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea